By Keyue Ma Smedley; R D Middlebrook; Slobodan Ćuk; California Institute of Technology. Division of Engineering and Applied Science
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Reynolds, U. Pfeiffer, J. Grzyb, A. Joseph, E. Mina, B. Orner, H. Ding, R. Wachnik, and K. Walter, ‘Silicon germanium based millimetre-wave ICs for Gbps wireless communications and radar systems’, Semiconductor Science and Technology 22(1) (2007), S236– S243. [7] S. Reynolds, B. Floyd, U. Pfeiffer, T. Beukema, J. Grzyb, C. Haymes, B. Gaucher, and M. Soyuer, ‘A silicon 60 GHz receiver and transmitter chipset for broadband communications’, IEEE J. SolidState Circuits 41(12) (2006), 2820–30. [8] B.
In this case, the dielectric material is silicon dioxide (SiO2 ) as opposed to the silicon substrate material. The silicon IC interconnects are therefore confined in a vertical space that is an order of magnitude thinner (10 µm) than in MMIC technologies. Second, silicon IC surfaces are passivated with a thick layer of polyimide for reasons of reliability to prevent oxidation of the metal stack. This makes on-chip passives less sensitive to additional IC encapsulation materials. The top surfaces of MMICs, however, are usually not covered by passivation materials and passive devices need to be carefully remodeled to account for the electromagnetic properties of the encapsulation materials.
It was originally designed for low-frequency analog and digital applications. A QFN package has a metal paddle to which the die is glued with conductive epoxy. The die bond pads are wire bonded to metal pins and the entire assembly is covered (encapsulated) with a mold compound. The package does not have internal leads (no-lead) or rewiring capabilities. Multiple dies are usually molded simultaneously on a larger leadframe. Dicing off the lead-frame singulates the individual packages. The packages are put on tape and reel for placement like any other low-cost SMT reflow solder component.