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Extra resources for Thin Film Magnotoresistive Sensors
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Ciureanu (1992) experimentally determined the current density of the sensor with a copper bias layer. 6 106 A/cm2. Shelledy and Brock (1975) and O’Day (1974) proposed the design of differentially biased sensors. 65 presents the idea and the construction of such an ‘E-shaped’ sensor. The currents in both magnetoresistors are at opposite directions and therefore fulfill the condition: ⌬Rx1(H) ϭ Ϫ⌬Rx2(H). 65 The differentially shunt-biased magnetoresistive transducer (O’Day 1974). has been proved experimentally that, after connecting such sensors into a bridge circuit, the higher order harmonics components in the output signal were significantly suppressed (Shelledy and Brock 1975).
51 The behaviours of the CoPt biasing layer system: the coercivity versus the layer composition; the bias field versus the thickness of the layer (Kitada et al 1985). 52 The dependence of the bias field and coercivity on the insulator layer thickness (Kitada et al 1985, Hill et al 1986). concentrated in the permalloy film. In the case of a shielded head the bias field may decrease with the increase of the spacer thickness due to absorption of part of the flux by the shield. 52). Therefore it is not recommended to decrease the insulator layer thickness below 2 m (Hill et al 1986).
The sensitivity of the real magnetoresistor is far from this expectation. This problem will be described in more detail in the next chapters. 5 Applying the Stoner–Wohlfart model for analysis of magnetoresistive effects The equations, presented in the previous subsection, describing the thin film magnetoresistive effect, are valid only when the applied external magnetic field PART 1 9/5/01 9:22 pm Page 23 AMR SENSORS 23 is relatively small. In general it is convenient to use the Stoner–Wohlfarth physical model (Stoner and Wohlfarth 1991) for analysis of the magnetic behaviour of a single domain.