Download Properties of Semiconductor Alloys: Group-IV, III-V and by Sadao Adachi, Peter Capper, Safa Kasap, Arthur Willoughby PDF

By Sadao Adachi, Peter Capper, Safa Kasap, Arthur Willoughby

The most goal of this e-book is to supply a entire therapy of the fabrics features of group-IV, III−V and II−VI semiconductor alloys utilized in a number of digital and optoelectronic units. the subjects coated during this publication comprise the structural, thermal, mechanical, lattice vibronic, digital, optical and service shipping houses of such semiconductor alloys. The ebook experiences not just as a rule recognized alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but in addition new alloys, comparable to dilute-carbon alloys (CSiGe, CSiSn, etc.), III−N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II−VI semiconductor alloys. eventually there's an in depth bibliography incorporated when you desire to locate more information in addition to tabulated values and graphical info at the homes of semiconductor alloys.

Show description

Read Online or Download Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors (Wiley Series in Materials for Electronic & Optoelectronic Applications) PDF

Similar electronics books

Engineer's Mini-Notebook: Optoelectronics Circuits

This ebook contains standart program circuits and circuits designed via the writer

Diagnostic Electron Microscopy: A Text Atlas (2nd Ed.)

This article atlas, now in its moment variation, provides in least difficult shape the fundamental diagnostic standards utilized by the electron microscopist in learning neoplasms and different ailments encountered within the regimen perform of pathology. each box of electron microscopy is roofed and coffee magnification plates are juxtaposed with better magnifications to demonstrate diagnostic positive aspects.

Extra resources for Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors (Wiley Series in Materials for Electronic & Optoelectronic Applications)

Sample text

Hino, and T. Suzuki, Jpn. J. Appl. Phys. 34, L469 (1995). [8] A. Gomyo, K. Makita, I. Hino, and T. Suzuki, Phys. Rev. Lett. 72, 673 (1994). [9] A. A. Mbaye, L. G. Ferreira, and A. Zunger, Phys. Rev. Lett. 58, 49 (1987). [10] H. S. Lee, S. Yi, T. W. Kim, Y. J. Park, J. Y. Lee, M. S. Kwon, and H. L. Park, Solid State Commun. 137, 70 (2006). [11] R. A. Soref, Proc. IEEE 81, 1687 (1993). [12] E. T. Croke, A. T. Hunter, C. C. Ahn, T. Laursen, D. Chandrasekhar, A. E. Bair, D. J. Smith, and J. W. Mayer, J.

Appl. Phys. 85, 160 (1999). [32] M. Schenk, I. H€ahnert, L. T. H. Duong, and H. H. Niebsch, Cryst.

Shimada, and Y. Nishino, Phys. Rev. B 45, 14005 (1992). [18] I. Yonenaga, M. Sakurai, M. H. F. Sluiter, Y. Kawazoe, and S. Muto, J. Mater. : Mater. Electron. 16, 429 (2005). [19] N. S. Takahashi, in Properties of Aluminium Gallium Arsenide, EMIS Datareviews Series No. 7 (edited by S. Adachi), INSPEC, London, 1993, p. 3. [20] R. E. Nahory, M. A. Pollack, W. D. , and R. L. Barns, Appl. Phys. Lett. 33, 659 (1978). [21] F. Germini, C. Bocchi, C. Ferrari, S. Franchi, A. Baraldi, R. Magnanini, D. D. Salvador, M.

Download PDF sample

Rated 4.48 of 5 – based on 24 votes