Download Optoelectronic Devices: III Nitrides by Mohamed Henini, M Razeghi PDF

By Mohamed Henini, M Razeghi

Great development has been made within the previous few years within the progress, doping and processing applied sciences of the broad bandgap semiconductors. for that reason, this category of fabrics now holds major promis for semiconductor electronics in a huge diversity of applications.
The important driving force for the present revival of curiosity in III-V Nitrides is their power use in excessive energy, hot temperature, excessive frequency and optical units proof against radiation damage.
This e-book presents a large variety of optoelectronic functions of III-V nitrides and covers the full technique from development to units and purposes making it crucial studying for these operating within the semiconductors or microelectronics.
Broad assessment of optoelectronic purposes of III-V nitrides

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1998) GalnN/GaN multi-quantum well laser diodes grown by low-pressure metalorganic chemical vapor deposition. MRS Internet J. Nitride Semicond. , 3 (1). , Kung, P. & Razeghi, M. (1999) Aluminum gallium nitride shortperiod superlattices doped with magnesium. Appl. Phys. , 74, 2023. , Kung, P. & Razeghi, M. (2002) Characteristics of high quality p-type Al;,Gai_;,N/GaN superlattices. Appl. Phys. , 80,2108. html. , Tanaka, T. & Koike, M. (1995) Stimulated emission by current injection from an AlGaN/GaN/GaInN quanmm well device.

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J. Appl. , 34, L797. , Takahashi, N. & Sato, S. (1996) Full-color fluorescent display devices using a nearUV Hght-emitting diode. Jpn. J Appl. , 35, L838. htm. , Kung, P. & Razeghi, M. (2002) Topemission ultraviolet light-emitting diodes with peak emission at 280 nm. Appl. Phys. , 81,801. K. Y. (2002) Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire. Appl. Phys. , 81, 2151. , Razeghi, M. J. (2002) 280 nm UV LEDs grown on HVPE GaN substrates.

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