By M. J. Morant (auth.)
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The field oxide is grown by heating the siliconinan oxidizing atmosphere. As the silicon oxidc (Si0 1 ) is formed, it consumes silicon from below so that it grows downwards as weil as upwards relative to the original surface. The growth of thc field oxide has to be localized to selected rcgions around each transistor. to form the isolating barriers shown in Fig. 5(b ). V8 - - - - - - 1 reg1on (b) Fig. 5 The formation of a parasitic MOST between transistors A and B and its suppression by the addition of an oxide isolation barrier (b ).
If two layers of interconnection are used. the insulator between thcm is usually a thin film of organic polyimide that is deposited after the patterning of the first layer of polysilicon or meta!. A Complete CMOS Fabrication Sequence The description here is considerably simplified. Most CMOS processes have additional implants below the field oxide and around the active regions to help reduce parasitic effects that become more important as circuit dimensions are reduced. G s c===I;:J~ c()L I Ln Without self-alignment, the gate layer would have tobe made Iarger than the spacing between source and drain to be sure of covering the p-type surface even if it is displaced by the maximum manufacturing tolerance.
The diffused layers in the silicon are also used for intcrconnections hetween components over shorter distances still. Circuits can be made smaller if the meta! connections can be made on two or more Ievels. In a double-metat fabrication process two laye rs of metallization are used with a polyimide insulating layer in between (Fig. 14) . Contacts are made between the layers by etching holes, called vias, in the polyimidc before depositing and patterning the second layer of meta!. Some manufacturers also have processes with two layers of polysilicon to makc the interconnect more compact.