By Takashi Goto; Yi-Bing Cheng; Takashi Akatsu; Nihon Seramikkusu Kyōkai
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Extra info for Advanced engineering ceramics and composites : selected, peer reviewed papers from the 4th International Symposium on Advanced Ceramics, Osaka International Convention Center, November 14-18, 2010, Japan
3240  E. Opila, S. Levine and J. Lorincz: J. Mat. Sci. 5969  P. E. P. Haggerty, D. K. L. D. M. Kriven: J. Eur. Ceram. Soc. 2375  T. Narushima, T. Goto and T. Hirai: J. Am. Ceram. Soc. 1386  S. Tanigushi and K. Kurokawa: Kouon sanka no kiso to ouyou [in Japanese] (Uchida Rokakuho, Japan 2006). Key Engineering Materials Vol. jp Keywords: Silicon carbide; Joining; Tape cast; Microstructure; Mechanical properties. Abstract. SiC substrates were successfully bonded by tape-cast SiC-Al2O3-Y2O3 interlayers in the temperature range of 1800-1900 °C for 60 min at 15 MPa pressure in flowing Ar.
Vol. 77 (1994), p. 2518. S. Lee, Y. Kim, C. Kim: J. Mater. Sci. Vol. 29 (1994), p. 5321. H. Ye, V. V. Pujar, N. P. Padture: Acta Mater. Vol. 47 (1999), p. 481. H. Xu, T. Bhatia, S. Deshpande, N. Padture, A. Ortiz, F. Cumbrera: J. Am. Ceram. Soc. Vol. 84 (2001), p. 1578. Y. Kim, M. Mitomo, H. Emoto, J. Lee: J. Am. Ceram. Soc. Vol. 81 (1998), p. 3136. L. Ogbuji, T. Mitchell, A. Heuer, S. Shinozaki: J. Am. Ceram. Soc. Vol. 64 (1981), p. 100. Key Engineering Materials Vol. uk Keywords: silicon carbide, friction surface, friction layer, ductile deformation Abstract.
The detailed image analysis indicates the close interlayer thickness, the faster grain growth rate of β-SiC relative to α-SiC one and the good coincidence between aspect ratio and morphology in all joints. In addition, the SiC grains of interlayer adjacent to interface grow preferentially from the exposed SiC grains of substrate, which is believed to correlate with the microstructures of both substrate and interlayer and the grain growth behaviors. Finally, the SiC joints bonded by tape interlayers exhibit an average bending strength over 359 MPa and generally fracture within SiC substrates.